类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | JESD-30代码 | 资历状况 | 配置 | 行间距 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 输入电容 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 恢复时间 | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 高度 | 长度 | 宽度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() | NTTD1P02R2 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | SILICON | 30 ns | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e0 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin/Lead (Sn/Pb) | 逻辑电平兼容 | -20V | 500mW | 鸥翼 | 240 | not_compliant | -1.45A | 30 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | 2 P-Channel (Dual) | SWITCHING | 160m Ω @ 1.45A, 4.5V | 1.4V @ 250μA | 265pF @ 16V | 10nC @ 4.5V | 30ns | 20V | 30 ns | 1.45A | 8V | 0.16Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||
AON6918 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 15A 26.5A | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 2.2W | 2W 2.2W | 2 N-Channel (Half Bridge) | 5.2m Ω @ 20A, 10V | 2.3V @ 250μA | 1560pF @ 15V | 21nC @ 10V | 25V | 26.5A | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110814PCL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 通孔 | 通孔 | 16-DIP (0.300, 7.62mm) | 16 | 12mA 3mA | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | yes | 活跃 | 1 (Unlimited) | 500mW | unknown | 500mW | 4 N-Channel, Matched Pair | 500 Ω @ 5.4V | 1.42V @ 1μA | 2.5pF @ 5V | 3mA | 10.6V | 10V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4800L | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | -55°C~150°C TJ | Bulk | 2011 | Obsolete | 1 (Unlimited) | 2W | 2W | 2 N-Channel (Dual) | 27m Ω @ 6.9A, 10V | 1.5V @ 250μA | 630pF @ 15V | 7nC @ 4.5V | 30V | 6.9A | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD110900ASAL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD®, Zero Threshold™ | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | Dual | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | 500Ohm @ 4V | 10mV @ 1μA | 2.5pF @ 5V | 10.6V | 12mA | 10.6V | 10V | 2.5pF | Standard | 500Ohm | 500 Ω | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N39TU,LF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 6-SMD, Flat Leads | 1.6A Ta | 150°C | Tape & Reel (TR) | 活跃 | 1 (Unlimited) | 500mW | 2 N-Channel (Dual) | 119m Ω @ 1A, 4V | 1V @ 1mA | 260pF @ 10V | 7.5nC @ 4V | 20V | Standard | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ALD114913SAL | Advanced Linear Devices Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8-SOIC | 12mA 3mA | 10 ns | 0°C~70°C TJ | Tube | 2005 | EPAD® | 活跃 | 1 (Unlimited) | 70°C | 0°C | 500mW | Dual | 500mW | 500mW | 2 N-Channel (Dual) Matched Pair | 500Ohm @ 2.7V | 1.26V @ 1μA | 2.5pF @ 5V | 10.6V | 3mA | 10.6V | 10V | 2.5pF | 耗尽模式 | 500Ohm | 500 Ω | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IXTL2X220N075T | IXYS | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | 通孔 | ISOPLUSi5-Pak™ | 5 | SILICON | 2 | 55 ns | -55°C~175°C TJ | Tube | 2007 | TrenchMV™ | yes | Obsolete | 1 (Unlimited) | 5 | EAR99 | 雪崩 额定 | 150W | SINGLE | 未说明 | 未说明 | 5 | 不合格 | COMPLEX | 增强型MOSFET | 150W | ISOLATED | 2 N-Channel (Dual) | SWITCHING | 5.5m Ω @ 50A, 10V | 4V @ 250μA | 7700pF @ 25V | 165nC @ 10V | 65ns | 75V | 47 ns | 120A | 75V | 600A | 1000 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||
SSM6N48FU,LF | Toshiba Semiconductor and Storage | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | SILICON | 100mA Ta | 2 | 180 ns | 150°C | Tape & Reel (TR) | 2014 | U-MOSIII | 活跃 | 1 (Unlimited) | 6 | 鸥翼 | 2 | 增强型MOSFET | 35 ns | 300mW | 2 N-Channel (Dual) | SWITCHING | 3.2 Ω @ 10mA, 4V | 1.5V @ 100μA | 15.1pF @ 3V | 30V | 100mA | 20V | 0.1A | 5.4Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7303PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 22 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 4.9A | 2 | -55°C~150°C TJ | Tube | 1997 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 逻辑电平兼容 | 鸥翼 | 260 | 30 | IRF7303PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 2.4A, 10V | 1V @ 250μA | 520pF @ 25V | 25nC @ 10V | 30V | MS-012AA | 4.9A | 0.05Ohm | 20A | 30V | METAL-OXIDE SEMICONDUCTOR | 1.4W | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
![]() | IRF7343PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 4.7A 3.4A | 2 | -55°C~150°C TJ | Tube | 2004 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY | DUAL | 鸥翼 | 未说明 | 未说明 | IRF7343PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 50m Ω @ 4.7A, 10V | 1V @ 250μA | 740pF @ 25V | 36nC @ 10V | 55V | N-CHANNEL AND P-CHANNEL | MS-012AA | 4.7A | 0.05Ohm | 38A | 55V | 72 mJ | METAL-OXIDE SEMICONDUCTOR | 2W | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
![]() | IRF7316PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 4.9A | 2 | -55°C~150°C TJ | Tube | 2004 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | AVALANCHE RATED, HIGH RELIABILITY | 鸥翼 | 未说明 | 未说明 | IRF7316PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 58m Ω @ 4.9A, 10V | 1V @ 250μA | 710pF @ 25V | 34nC @ 10V | 30V | MS-012AA | 4.9A | 0.058Ohm | 30A | 30V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||
![]() | IRF7342PBF | Infineon Technologies | 数据表 | 7 In Stock | - | 最小起订量: 1 最小包装量: 1 | 39 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | SILICON | 3.4A | 2 | -55°C~150°C TJ | Tube | 1999 | HEXFET® | e3 | Discontinued | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 鸥翼 | 260 | 30 | IRF7342PBF | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | 2 P-Channel (Dual) | SWITCHING | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 690pF @ 25V | 38nC @ 10V | 55V | MS-012AA | 3.4A | 0.105Ohm | 27A | 55V | 114 mJ | METAL-OXIDE SEMICONDUCTOR | 2W | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||
AON2810 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 18 Weeks | 表面贴装 | 表面贴装 | 6-WDFN Exposed Pad | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | 活跃 | 1 (Unlimited) | 2.5W | 增强型MOSFET | 2.5W | 2 N-Channel (Dual) | 44m Ω @ 2A, 10V | 1.4V @ 250μA | 235pF @ 15V | 10nC @ 10V | 30V | 2A | 2A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF7306TR | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 逻辑电平兼容 | -30V | 2W | 鸥翼 | 未说明 | -3.6A | 未说明 | R-PDSO-G8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2 P-Channel (Dual) | 100m Ω @ 1.8A, 10V | 1V @ 250μA | 440pF @ 25V | 25nC @ 10V | 30V | 3.6A | 3A | 0.1Ohm | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | Non-RoHS Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||
![]() | AUIRF7341QTR | Infineon Technologies | 数据表 | 1 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 31 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101, HEXFET® | 不用于新设计 | 1 (Unlimited) | 8 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | 2.4W | 鸥翼 | Dual | 增强型MOSFET | 2.4W | 9.2 ns | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 5.1A, 10V | 3V @ 250μA | 780pF @ 25V | 44nC @ 10V | 7.7ns | 55V | 12.5 ns | 5.1A | 1V | 20V | 0.05Ohm | 55V | 140 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||
![]() | IRF7301TRPBF | Infineon Technologies | 数据表 | 13 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 32 ns | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | HEXFET® | 活跃 | 1 (Unlimited) | 8 | EAR99 | 50mOhm | 超低电阻 | 20V | 2W | 鸥翼 | 5.2A | IRF7301PBF | 6.3 mm | Dual | 增强型MOSFET | 2W | 9 ns | 2 N-Channel (Dual) | SWITCHING | 50m Ω @ 2.6A, 4.5V | 700mV @ 250μA | 660pF @ 15V | 20nC @ 4.5V | 42ns | 51 ns | 5.2A | 700mV | 12V | 20V | METAL-OXIDE SEMICONDUCTOR | 44 ns | 逻辑电平门 | 700 mV | 1.4986mm | 4.9784mm | 3.9878mm | 无 | 无SVHC | ROHS3 Compliant | Contains Lead, Lead Free | |||||||||||||||||||||||||||||||||
![]() | IRF7319PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | -55°C~150°C TJ | Tube | 1997 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | IRF7319PBF | 2W | N and P-Channel | 29m Ω @ 5.8A, 10V | 1V @ 250μA | 650pF @ 25V | 33nC @ 10V | 30V | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6L09FUTE85LF | Toshiba Semiconductor and Storage | 数据表 | 30 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 400mA 200mA | 85 ns | 150°C TJ | Cut Tape (CT) | 2014 | 活跃 | 1 (Unlimited) | 300mW | 2 | Dual | 增强型MOSFET | 85 ns | N and P-Channel | 700m Ω @ 200MA, 10V | 1.8V @ 100μA | 20pF @ 5V | N-CHANNEL AND P-CHANNEL | 200mA | -1.8V | 0.4A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NTTD1P02R2G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 8 | SILICON | 2 | 30 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 逻辑电平兼容 | -20V | 500mW | 鸥翼 | 260 | -1.45A | 40 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 500mW | 2 P-Channel (Dual) | SWITCHING | 160m Ω @ 1.45A, 4.5V | 1.4V @ 250μA | 265pF @ 16V | 10nC @ 4.5V | 30ns | 20V | 30 ns | 1.45A | 8V | 0.16Ohm | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||
![]() | NTMFD4C88NT3G | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 24 Weeks | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 11.7A 14.2A | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | yes | Obsolete | 1 (Unlimited) | Tin (Sn) | 1.1W | 2 N-Channel (Dual) Asymmetrical | 5.4m Ω @ 10A, 10V | 2.2V @ 250μA | 1252pF @ 15V | 22.2nC @ 10V | 30V | 14.2A | Standard | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AON6922 | Alpha & Omega Semiconductor Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-WDFN Exposed Pad | 8 | 18A 31A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2010 | Obsolete | 1 (Unlimited) | 2.2W | 增强型MOSFET | 2W 2.2W | 2 N-Channel (Half Bridge) | 3.8m Ω @ 20A, 10V | 1.7V @ 250μA | 2340pF @ 12.5V | 32nC @ 10V | 25V | 31A | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMWD19UN,518 | NXP USA Inc. | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8-TSSOP | 5.6A | -55°C~150°C TJ | Tape & Reel (TR) | 1997 | TrenchMOS™ | Obsolete | 1 (Unlimited) | 2.3W | 2 N-Channel (Dual) | 23mOhm @ 3.5A, 4.5V | 700mV @ 1mA | 1478pF @ 10V | 28nC @ 5V | 30V | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FD6M016N03 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 通孔 | EPM15 | EPM15 | 80A | -40°C~150°C TJ | Tube | Power-SPM™ | Obsolete | 1 (Unlimited) | 2 N-Channel (Dual) | 1.6mOhm @ 40A, 10V | 3V @ 250μA | 11535pF @ 15V | 295nC @ 10V | 30V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SSM6N43FU,LF | Toshiba Semiconductor and Storage | 数据表 | 10 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | 6 | 150°C TJ | Tape & Reel (TR) | 2014 | 活跃 | 1 (Unlimited) | EAR99 | 200mW | unknown | 200mW | 2 N-Channel (Dual) | 630m Ω @ 200mA, 5V | 1V @ 1mA | 46pF @ 10V | 1.23nC @ 4V | 20V | 500mA | Logic Level Gate, 1.5V Drive | 符合RoHS标准 |
NTTD1P02R2
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AON6918
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ALD110814PCL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
AO4800L
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
ALD110900ASAL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N39TU,LF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
ALD114913SAL
Advanced Linear Devices Inc.
分类:Transistors - FETs, MOSFETs - Arrays
IXTL2X220N075T
IXYS
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N48FU,LF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
IRF7303PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7343PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7316PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7342PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
AON2810
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
IRF7306TR
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
AUIRF7341QTR
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF7301TRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
5.043830
IRF7319PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
SSM6L09FUTE85LF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
NTTD1P02R2G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
NTMFD4C88NT3G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AON6922
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
PMWD19UN,518
NXP USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
FD6M016N03
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
SSM6N43FU,LF
Toshiba Semiconductor and Storage
分类:Transistors - FETs, MOSFETs - Arrays
2.233568
